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1995 | 88 | 4 | 703-706
Article title

Transition Metal-Related Centres in Silicon Studied by High-Resolution Deep Level Transient Spectroscopy

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EN
Abstracts
EN
High-resolution Laplace-transform deep level transient spectroscopy tech­nique has been used to study a fine structure in the carrier emission process for transition metal- and thermal donors-related defects in silicon. For the case of the transition metal centres the method revealed the fine structure when the defect has a similar emission characteristics to other defects in the crystal. The method also demonstrated the complex emission process for the thermal donors.
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EN
Publisher

Year
Volume
88
Issue
4
Pages
703-706
Physical description
Dates
published
1995-10
Contributors
  • Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland
author
  • Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warszawa, Poland
author
  • Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warszawa, Poland
author
  • Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland
References
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Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv88z421kz
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