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1995 | 88 | 4 | 703-706
Article title

Transition Metal-Related Centres in Silicon Studied by High-Resolution Deep Level Transient Spectroscopy

Content
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Languages of publication
EN
Abstracts
EN
High-resolution Laplace-transform deep level transient spectroscopy tech­nique has been used to study a fine structure in the carrier emission process for transition metal- and thermal donors-related defects in silicon. For the case of the transition metal centres the method revealed the fine structure when the defect has a similar emission characteristics to other defects in the crystal. The method also demonstrated the complex emission process for the thermal donors.
Keywords
EN
Year
Volume
88
Issue
4
Pages
703-706
Physical description
Dates
published
1995-10
References
Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv88z421kz
Identifiers
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