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1995 | 88 | 4 | 699-702
Article title

Electron Localization in Sb-Doped Si/SiGe Superlattices

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Languages of publication
EN
Abstracts
EN
Millikelvin studies of in-plane magnetoconductance in short period Si/Ge:Sb superlattices have been carried out in order to examine the effect of anisotropy on quantum localization. The field-induced metal-to-insulator transition has been observed, indicating the existence of extended states. This suggests that despite anisotropy as large as D_{∥}/D_{⊥} ≈ 10^{3} the system behaves as 3D in respect of localization by disorder.
Keywords
EN
Publisher

Year
Volume
88
Issue
4
Pages
699-702
Physical description
Dates
published
1995-10
Contributors
author
  • Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland
  • Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland
author
  • Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland
author
  • Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland
author
  • Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland
author
  • Institut für Halbleiterphysik, Johannes Kepler Universität Linz, 4040 Linz, Austria
author
  • Institut für Halbleiterphysik, Johannes Kepler Universität Linz, 4040 Linz, Austria
author
  • Institut für Halbleiterphysik, Johannes Kepler Universität Linz, 4040 Linz, Austria
author
  • Daimler-Benz Research Center, 89081 Ulm, Germany
References
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv88z420kz
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