MOCVD Growth of InP-Related Materials Using TEA and TBP

• Authors: M. Czub , W. Strupiński
• Languages of publication: EN

Abstracts

EN

High quality epitaxial layers of GaAs, InP, AlAs, InGaAs, InGaP, In­GaAlP have been grown by low-pressure metalorganic chemical vapor depo­sition using TMIn, TMGa, TMAl and the less hazardous group V precursors, ΤΒA, TBP. Excellent morphology was obtained for GaAs and InP in the temperature ranges of 570-650°C and 520-650°C, respectively. The V/III ratio as low as 1.5 was used to grow epilayers of InP. The 77 K mobility of InGaAs lattice matched to InP (grown with ΤΒA) was 72360 cm^{2}/(V s) for n = 1.5 × 10^{15}/cm^{-3} and a thickness of 2 μm. Comparable photolumines­cence parameters of InGaP between layers grown with TBP and PH_{3} were achieved, but for InGaAlP (TBP) photoluminescence intensity was signifi­cantly lower than for InGaAlP (PH_{3}). The promising results allow one to apply of ΤΒA and TBP for developing of device structures.

Keywords

EN

68.55.Ce

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1995
• Volume: 88
• Issue: 4
• Pages: 695-698

Dates

published

1995-10

Contributors

author

M. Czub

• Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warszawa, Poland

author

W. Strupiński

• Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warszawa, Poland