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1995 | 88 | 4 | 695-698
Article title

MOCVD Growth of InP-Related Materials Using TEA and TBP

Content
Title variants
Languages of publication
EN
Abstracts
EN
High quality epitaxial layers of GaAs, InP, AlAs, InGaAs, InGaP, In­GaAlP have been grown by low-pressure metalorganic chemical vapor depo­sition using TMIn, TMGa, TMAl and the less hazardous group V precursors, ΤΒA, TBP. Excellent morphology was obtained for GaAs and InP in the temperature ranges of 570-650°C and 520-650°C, respectively. The V/III ratio as low as 1.5 was used to grow epilayers of InP. The 77 K mobility of InGaAs lattice matched to InP (grown with ΤΒA) was 72360 cm^{2}/(V s) for n = 1.5 × 10^{15}/cm^{-3} and a thickness of 2 μm. Comparable photolumines­cence parameters of InGaP between layers grown with TBP and PH_{3} were achieved, but for InGaAlP (TBP) photoluminescence intensity was signifi­cantly lower than for InGaAlP (PH_{3}). The promising results allow one to apply of ΤΒA and TBP for developing of device structures.
Keywords
EN
Publisher

Year
Volume
88
Issue
4
Pages
695-698
Physical description
Dates
published
1995-10
Contributors
author
  • Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warszawa, Poland
  • Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warszawa, Poland
References
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv88z419kz
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