Effect of Magnetic Field on Fine Structure of Tunnel Current in Double-Barrier Resonant-Tunneling Devices

• Authors: A.E. Belyaev , S.A. Vitusevich , B.A. Glavin , A. Mąkosa , W. Dobrowolski
• Languages of publication: EN

Abstracts

EN

An effect of magnetic field on a fine oscillatory structure revealed in the resonant current flowing through double-barrier resonant-tunneling devices is examined. It is found that the observed variation of the fine structure in a magnetic field parallel to the current direction differs considerably from that appearing in tunnel current flowing through single-barrier structures. Experimental results are explained in terms of the quantum interference effect arising in structures having wide spacer layers.

Keywords

EN

73.40.Gk; 85.30.Mn

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1995
• Volume: 88
• Issue: 4
• Pages: 675-678

Dates

published

1995-10

Contributors

author

A.E. Belyaev

• Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Kiev 252028, Ukraine

author

S.A. Vitusevich

• Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Kiev 252028, Ukraine

author

B.A. Glavin

• Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Kiev 252028, Ukraine

author

A. Mąkosa

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland

author

W. Dobrowolski

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland