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1995 | 88 | 4 | 675-678
Article title

Effect of Magnetic Field on Fine Structure of Tunnel Current in Double-Barrier Resonant-Tunneling Devices

Content
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Languages of publication
EN
Abstracts
EN
An effect of magnetic field on a fine oscillatory structure revealed in the resonant current flowing through double-barrier resonant-tunneling devices is examined. It is found that the observed variation of the fine structure in a magnetic field parallel to the current direction differs considerably from that appearing in tunnel current flowing through single-barrier structures. Experimental results are explained in terms of the quantum interference effect arising in structures having wide spacer layers.
Keywords
EN
Publisher

Year
Volume
88
Issue
4
Pages
675-678
Physical description
Dates
published
1995-10
Contributors
author
  • Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Kiev 252028, Ukraine
  • Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Kiev 252028, Ukraine
author
  • Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Kiev 252028, Ukraine
author
  • Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland
  • Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland
References
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv88z414kz
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