Anion-Cation Site Dependence of Pressure Coefficients for Donors in GaAs

• Authors: S. Bednarek , J. Adamowski
• Languages of publication: EN

Abstracts

EN

The theoretical model, based on the many-band approach, is proposed for the strongly localized donor states in GaAs. The pressure coefficients for the states of A_{1} and Τ-2 symmetry have been calculated for the donors at the anion and cation sites. The obtained results show that these pressure coefficients are different from the conduction-band pressure coefficients and are dependent on the lattice site occupied by the impurity as well as on the symmetry of the donor states.

Keywords

EN

71.55.-i

• Journal: Acta Physica Polonica A
• Year: 1995
• Volume: 88
• Issue: 4
• Pages: 671-674

Dates

published

1995-10

Contributors

author

S. Bednarek

• Faculty of Physics and Nuclear Techniques, Technical University of Mining and Metallurgy (AGH), Al. Mickiewicza 30, 30-059 Kraków, Poland

author

J. Adamowski

• Faculty of Physics and Nuclear Techniques, Technical University of Mining and Metallurgy (AGH), Al. Mickiewicza 30, 30-059 Kraków, Poland