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1995 | 88 | 4 | 671-674
Article title

Anion-Cation Site Dependence of Pressure Coefficients for Donors in GaAs

Content
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Languages of publication
EN
Abstracts
EN
The theoretical model, based on the many-band approach, is proposed for the strongly localized donor states in GaAs. The pressure coefficients for the states of A_{1} and Τ-2 symmetry have been calculated for the donors at the anion and cation sites. The obtained results show that these pressure coefficients are different from the conduction-band pressure coefficients and are dependent on the lattice site occupied by the impurity as well as on the symmetry of the donor states.
Keywords
EN
Publisher

Year
Volume
88
Issue
4
Pages
671-674
Physical description
Dates
published
1995-10
Contributors
author
  • Faculty of Physics and Nuclear Techniques, Technical University of Mining and Metallurgy (AGH), Al. Mickiewicza 30, 30-059 Kraków, Poland
author
  • Faculty of Physics and Nuclear Techniques, Technical University of Mining and Metallurgy (AGH), Al. Mickiewicza 30, 30-059 Kraków, Poland
References
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv88z413kz
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