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1995 | 88 | 4 | 671-674
Article title

Anion-Cation Site Dependence of Pressure Coefficients for Donors in GaAs

Content
Title variants
Languages of publication
EN
Abstracts
EN
The theoretical model, based on the many-band approach, is proposed for the strongly localized donor states in GaAs. The pressure coefficients for the states of A_{1} and Τ-2 symmetry have been calculated for the donors at the anion and cation sites. The obtained results show that these pressure coefficients are different from the conduction-band pressure coefficients and are dependent on the lattice site occupied by the impurity as well as on the symmetry of the donor states.
Keywords
EN
Year
Volume
88
Issue
4
Pages
671-674
Physical description
Dates
published
1995-10
References
Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv88z413kz
Identifiers
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