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1995 | 88 | 4 | 667-670
Article title

Dependence of Exciton Linewidth on the Composition of Zn_{x}Mg_{1-x}Se Layers Grown by MBE

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EN
Abstracts
EN
This work deals with the study of the photoluminescence and reflectiv­ity properties of Zn_{x}Mg_{1-x}Se epilayers grown by molecular beam epitaxy on (001)GaAs and (111)ZnTe substrates. The photoluminescence spectra of Zn_{x}Mg_{1-x}Se layers grown on GaAs and ZnTe substrates are dominated by blue emission bands. The energetical positions and relative intensities of the bands depend on Mg contents in the epilayers. The shift of the maxima of blue emission toward higher photon energies and a simultaneous steep in­crease in the linewidth with an increase in Mg concentration are observed. A small amount of Mg added to ZnSe leads to a sharp increase in the linewidth from 2 meV in pure ZnSe layer grown on GaAs substrate to about 180 meV in Zn_{0.78}Μg_{0.22}Se.
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Year
Volume
88
Issue
4
Pages
667-670
Physical description
Dates
published
1995-10
Contributors
author
  • Institute of Physics, N. Copernicus University, Grudziądzka 5, 87-100 Toruń, Poland
author
  • Institute of Physics, N. Copernicus University, Grudziądzka 5, 87-100 Toruń, Poland
author
  • Institute of Physics, N. Copernicus University, Grudziądzka 5, 87-100 Toruń, Poland
References
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Publication order reference
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YADDA identifier
bwmeta1.element.bwnjournal-article-appv88z412kz
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