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1995 | 88 | 4 | 663-666
Article title

Surface Photovoltage in Photoemission Studies at Si/InP(110) Heterojunctions

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Languages of publication
EN
Abstracts
EN
We discuss the surface photovoltage effect observed in photoemission experiment performed at room (300 K) and low (120 K) temperatures on Si/InP(110) heterojunctions for a thin Si coverage on n- and p-doped InP substrates. The theoretical analysis of the surface photovoltage effect has been performed on the basis of thermionic and thermionic-field emission models of transport processes in Schottky barriers.
Keywords
EN
Publisher

Year
Volume
88
Issue
4
Pages
663-666
Physical description
Dates
published
1995-10
Contributors
author
  • Institute of Physics, Silesian Technical University, Krzywoustego 2, 44-100 Gliwice, Poland
author
  • Istituto di Struttura della Materia/CNR, Via E. Fermi 38, 00044 Frascati, Italy
author
  • Istituto di Struttura della Materia/CNR, Via E. Fermi 38, 00044 Frascati, Italy
author
  • Istituto di Struttura della Materia/CNR, Via E. Fermi 38, 00044 Frascati, Italy
References
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Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv88z411kz
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