Surface Photovoltage in Photoemission Studies at Si/InP(110) Heterojunctions

Adamowicz, B.; Ottaviani, C.; Quaresima, C.; Perfetti, P.

Journal

Acta Physica Polonica A

1995 | 88 | 4 | 663-666

Article title

Surface Photovoltage in Photoemission Studies at Si/InP(110) Heterojunctions

Authors

B. Adamowicz , C. Ottaviani , C. Quaresima , P. Perfetti

Content

Full texts:

http://przyrbwn.icm.edu.pl/APP/PDF/88/a088z4p11.pdf [remote]

Title variants

Languages of publication

Abstracts

We discuss the surface photovoltage effect observed in photoemission experiment performed at room (300 K) and low (120 K) temperatures on Si/InP(110) heterojunctions for a thin Si coverage on n- and p-doped InP substrates. The theoretical analysis of the surface photovoltage effect has been performed on the basis of thermionic and thermionic-field emission models of transport processes in Schottky barriers.

Keywords

73.20.-r 73.20.At

Publisher

Journal

Acta Physica Polonica A

Year

1995

Volume

Issue

Pages

663-666

Physical description

Dates

published

1995-10

Contributors

author

B. Adamowicz

Institute of Physics, Silesian Technical University, Krzywoustego 2, 44-100 Gliwice, Poland

author

C. Ottaviani

Istituto di Struttura della Materia/CNR, Via E. Fermi 38, 00044 Frascati, Italy

author

C. Quaresima

Istituto di Struttura della Materia/CNR, Via E. Fermi 38, 00044 Frascati, Italy

author

P. Perfetti

Istituto di Struttura della Materia/CNR, Via E. Fermi 38, 00044 Frascati, Italy

References

Document Type

Publication order reference

Identifiers

YADDA identifier

bwmeta1.element.bwnjournal-article-appv88z411kz