Surface Photovoltage in Photoemission Studies at Si/InP(110) Heterojunctions

• Authors: B. Adamowicz , C. Ottaviani , C. Quaresima , P. Perfetti
• Languages of publication: EN

Abstracts

EN

We discuss the surface photovoltage effect observed in photoemission experiment performed at room (300 K) and low (120 K) temperatures on Si/InP(110) heterojunctions for a thin Si coverage on n- and p-doped InP substrates. The theoretical analysis of the surface photovoltage effect has been performed on the basis of thermionic and thermionic-field emission models of transport processes in Schottky barriers.

Keywords

EN

73.20.-r; 73.20.At

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1995
• Volume: 88
• Issue: 4
• Pages: 663-666

Dates

published

1995-10

Contributors

author

B. Adamowicz

• Institute of Physics, Silesian Technical University, Krzywoustego 2, 44-100 Gliwice, Poland

author

C. Ottaviani

• Istituto di Struttura della Materia/CNR, Via E. Fermi 38, 00044 Frascati, Italy

author

C. Quaresima

• Istituto di Struttura della Materia/CNR, Via E. Fermi 38, 00044 Frascati, Italy

author

P. Perfetti

• Istituto di Struttura della Materia/CNR, Via E. Fermi 38, 00044 Frascati, Italy