Journal
Article title
Title variants
Languages of publication
Abstracts
Photoluminescence study of undoped, doped GaN grown on (00.1), (11.0), (01.2)Al_{2}O_{3} (100), (111)Si, and (00.1)6H-SiC substrates have been conducted. Strong bandedge emissions from all undoped samples and dopant-related emissions from doped samples were observed. Deep-level yellow emission centered around 2.2 eV was not observed from undoped GaN grown on 6H-SiC substrate, undoped GaN with optimum Ga source flow and doped GaN. The experiment data strongly suggest that Ga vacancies are the origin this deep-level emission.
Journal
Year
Volume
Issue
Pages
601-606
Physical description
Dates
published
1995-10
Contributors
author
- Center for Quantum Devices, Department of Electrical Engineering and Computer Science Northwestern University, Evanston. IL 60208, USA
author
- Center for Quantum Devices, Department of Electrical Engineering and Computer Science Northwestern University, Evanston. IL 60208, USA
author
- Center for Quantum Devices, Department of Electrical Engineering and Computer Science Northwestern University, Evanston. IL 60208, USA
author
- Center for Quantum Devices, Department of Electrical Engineering and Computer Science Northwestern University, Evanston. IL 60208, USA
author
- Center for Quantum Devices, Department of Electrical Engineering and Computer Science Northwestern University, Evanston. IL 60208, USA
author
- Center for Quantum Devices, Department of Electrical Engineering and Computer Science Northwestern University, Evanston. IL 60208, USA
References
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv88z405kz