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1995 | 88 | 4 | 601-606
Article title

Photoluminescence Study of GaN

Content
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Languages of publication
EN
Abstracts
EN
Photoluminescence study of undoped, doped GaN grown on (00.1), (11.0), (01.2)Al_{2}O_{3} (100), (111)Si, and (00.1)6H-SiC substrates have been conducted. Strong bandedge emissions from all undoped samples and dopant­-related emissions from doped samples were observed. Deep-level yellow emis­sion centered around 2.2 eV was not observed from undoped GaN grown on 6H-SiC substrate, undoped GaN with optimum Ga source flow and doped GaN. The experiment data strongly suggest that Ga vacancies are the origin this deep-level emission.
Keywords
EN
Publisher

Year
Volume
88
Issue
4
Pages
601-606
Physical description
Dates
published
1995-10
Contributors
author
  • Center for Quantum Devices, Department of Electrical Engineering and Computer Science Northwestern University, Evanston. IL 60208, USA
author
  • Center for Quantum Devices, Department of Electrical Engineering and Computer Science Northwestern University, Evanston. IL 60208, USA
author
  • Center for Quantum Devices, Department of Electrical Engineering and Computer Science Northwestern University, Evanston. IL 60208, USA
author
  • Center for Quantum Devices, Department of Electrical Engineering and Computer Science Northwestern University, Evanston. IL 60208, USA
author
  • Center for Quantum Devices, Department of Electrical Engineering and Computer Science Northwestern University, Evanston. IL 60208, USA
author
  • Center for Quantum Devices, Department of Electrical Engineering and Computer Science Northwestern University, Evanston. IL 60208, USA
References
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv88z405kz
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