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1995 | 88 | 4 | 567-580
Article title

SiGe: A Promise into Reality?

Content
Title variants
Languages of publication
EN
Abstracts
EN
The paper summarizes a few basic properties of SiGe showing that SiGe is an interesting material for high speed electronics. The advantage of using heterostructures in silicon-based technologies is demonstrated by taking SiGe heterobipolar transistors as an example. First results obtained with very fast and low-noise heterobipolar transistors are briefly mentioned. The paper is concluded by a short discussion of a few optoelectronic properties observed in various Si/Ge and Si/Si_{1-x}Ge_{x} strained-layer superlattices and quantum wells with particular emphasis on electroluminescence properties.
Keywords
EN
Publisher

Year
Volume
88
Issue
4
Pages
567-580
Physical description
Dates
published
1995-10
Contributors
  • Department of Solid State Physics, University of Lund, Box 118, 221 00 Lund, Sweden
author
  • Department of Solid State Physics, University of Lund, Box 118, 221 00 Lund, Sweden
author
  • Department of Solid State Physics, University of Lund, Box 118, 221 00 Lund, Sweden
References
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv88z402kz
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