State of the Art Molecular Beam Epitaxy of III-V Compounds

• Authors: C.T. Foxon
• Languages of publication: EN

Abstracts

EN

This paper discusses molecular beam epitaxy with particular empha­sis on the production of state of the art electronic and optoelectronic low dimensional structures and devices. The molecular beam epitaxy process is outlined briefly and the practical problems associated with producing "state of the art" (Al,Ga)As/GaAs structures are considered. Examples include high mobility electron and hole gases, low threshold current lasers and the multi-quantum well solar cells.

Keywords

EN

85.60.-q; 61.50.Cj; 68.55.Bd; 72.20.-i

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1995
• Volume: 88
• Issue: 4
• Pages: 559-566

Dates

published

1995-10

Contributors

author

C.T. Foxon

• Department of Physics, University of Nottingham, Nottingham NG7 2RD, England