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1995 | 88 | 4 | 559-566
Article title

State of the Art Molecular Beam Epitaxy of III-V Compounds

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Content
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EN
Abstracts
EN
This paper discusses molecular beam epitaxy with particular empha­sis on the production of state of the art electronic and optoelectronic low dimensional structures and devices. The molecular beam epitaxy process is outlined briefly and the practical problems associated with producing "state of the art" (Al,Ga)As/GaAs structures are considered. Examples include high mobility electron and hole gases, low threshold current lasers and the multi-quantum well solar cells.
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Publisher

Year
Volume
88
Issue
4
Pages
559-566
Physical description
Dates
published
1995-10
Contributors
author
  • Department of Physics, University of Nottingham, Nottingham NG7 2RD, England
References
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv88z401kz
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