Full-text resources of PSJD and other databases are now available in the new Library of Science.
Visit https://bibliotekanauki.pl

PL EN


Preferences help
enabled [disable] Abstract
Number of results
1995 | 87 | 6 | 981-983

Article title

Acoustical Dissipation in Some Tetrahedrally-Bonded Semiconducting Compounds

Authors

Content

Title variants

Languages of publication

EN

Abstracts

EN
Phonon-phonon coupling and thermoelastic relaxation are the principal thermal causes of ultrasonic attenuation in solids at room temperature. Sec­ond order elastic moduli and third order elastic moduli have been used to study the ultrasonic attenuation suffered by compressional and shear acous­tic waves for some tetrahedrally bonded semiconducting materials, viz. GaP, InP and InAs along ⟨100⟩, ⟨110⟩ and ⟨111⟩ crystallographic directions. At­tenuation in case of InP is found to be quite large as compared to GaP and InAs. The reason behind this discrepancy is due to doping of Cr in InP sam­ple and it is also seen that ultrasonic attenuation due to phonon-phonon interaction dominates over that due to thermoelastic relaxation.

Keywords

EN

Year

Volume

87

Issue

6

Pages

981-983

Physical description

Dates

published
1995-06
received
1994-12-13

Contributors

author
  • Department of Physics, University of Allahabad, Allahabad 211002, India
author
  • Department of Physics, University of Allahabad, Allahabad 211002, India

References

Document Type

Publication order reference

Identifiers

YADDA identifier

bwmeta1.element.bwnjournal-article-appv87z609kz
JavaScript is turned off in your web browser. Turn it on to take full advantage of this site, then refresh the page.