Influence of Oxygen Impurities on Electrical Properties of Fullerene C_{60}

• Authors: T. Rabenau , S. Roth , R.K. Kremer
• Languages of publication: EN

Abstracts

EN

We present high temperature dc, ac and contactless microwave conduc­tivity results on solid-state C_{60} (films and crystals) from room temperature up to 850 K. Heating pristine samples, which were exposed to the ambi­ent atmosphere, under dynamic vacuum at first leads to a reduction of the electrical resistance and finally, above ≈700 K, to an increase in the re­sistance. The decrease is ascribed to oxygen desorption and the increase to the chemical reactivity of residual chemisorbed oxygen with the C_{60} host molecules, respectively. Samples, annealed above 800 K, display a reversible temperature dependence of the resistance. The high temperature regime of their resistance exhibits an activated behaviour with an universal activation energy of 2E_{a} = 1.85 ± 0.04 eV for crystals and films, which is identical to the HOMO-LUMO splitting of the C_{60}-molecules.

Keywords

EN

72.20.Jv; 72.80.Le; 72.20.-i

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1995
• Volume: 87
• Issue: 4-5
• Pages: 881-884

Dates

published

1995-04

Contributors

author

T. Rabenau

• Max-Planck-Institut f. Festkörperforschung, Heisenbergstr. 1, D-70569 Stuttgart, Germany

author

S. Roth

• Max-Planck-Institut f. Festkörperforschung, Heisenbergstr. 1, D-70569 Stuttgart, Germany

author

R.K. Kremer

• Max-Planck-Institut f. Festkörperforschung, Heisenbergstr. 1, D-70569 Stuttgart, Germany