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1995 | 87 | 4-5 | 881-884
Article title

Influence of Oxygen Impurities on Electrical Properties of Fullerene C_{60}

Content
Title variants
Languages of publication
EN
Abstracts
EN
We present high temperature dc, ac and contactless microwave conduc­tivity results on solid-state C_{60} (films and crystals) from room temperature up to 850 K. Heating pristine samples, which were exposed to the ambi­ent atmosphere, under dynamic vacuum at first leads to a reduction of the electrical resistance and finally, above ≈700 K, to an increase in the re­sistance. The decrease is ascribed to oxygen desorption and the increase to the chemical reactivity of residual chemisorbed oxygen with the C_{60} host molecules, respectively. Samples, annealed above 800 K, display a reversible temperature dependence of the resistance. The high temperature regime of their resistance exhibits an activated behaviour with an universal activation energy of 2E_{a} = 1.85 ± 0.04 eV for crystals and films, which is identical to the HOMO-LUMO splitting of the C_{60}-molecules.
Keywords
EN
Year
Volume
87
Issue
4-5
Pages
881-884
Physical description
Dates
published
1995-04
References
Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv87z430kz
Identifiers
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