Extended X-ray Bremsstrahlung Isochromat Fine Structure of SiO_{2}

• Authors: E. Sobczak , R. Nietubyć
• Languages of publication: EN

Abstracts

EN

X-ray bremsstrahlung isochromat of amorphous SiO_{2} deposited on Si crystal was measured in an energy range up to 250 eV above the threshold. Extended X-ray bremsstrahlung isochromat he structure (EXBIFS) was observed up to 150 eV for SiO_{2} studied. The Fourier transform of EXBIFS showed two peaks originated from first and second neighbors around silicon and oxygen ions. Model calculations of EXBIFS of amorphous SiO_{2} were performed in terms of single scattering of spherical waves and compared with experimental results.

Keywords

EN

71.25.Tn; 79.20.Kz

Discipline

• 79.20.Kz: Other electron-impact emission phenomena

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1995
• Volume: 87
• Issue: 3
• Pages: 649-656

Dates

published

1995-03

received

1994-08-01

(unknown)

1994-11-04

Contributors

author

E. Sobczak

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland

author

R. Nietubyć

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland

Identifiers

DOI

10.12693/APhysPolA.87.649