Recombination nearby N-n GaSb/GaInAsSb Staggered Lineup Heterojunction

• Authors: A.A. Popov , A.N. Imenkov , N.M. Kolchanova , Yu.P. Yakovlev , T.T. Piotrowski
• Languages of publication: EN

Abstracts

EN

The recombination nearby large band-offset staggered lineup N-GaSb/n-GaInAsSb heterojunction was investigated by means of the elec­troluminescence and carrier lifetime measurements. It was demonstrated that the nature of recombination, tuning rate as well as relation between radiative and non-radiative recombination strongly depend on the N-n band-offset and that its increase improves the carrier localization on the N-n interface.

Keywords

EN

72.20.Nz

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1995
• Volume: 87
• Issue: 2
• Pages: 559-562

Dates

published

1995-02

Contributors

author

A.A. Popov

• A.F. Ioffe Physico-Technical Institute, Russian Academy Of Science, 26 Polytekhnicheskaya, 194021 St. Petersburg, Russia

author

A.N. Imenkov

• A.F. Ioffe Physico-Technical Institute, Russian Academy Of Science, 26 Polytekhnicheskaya, 194021 St. Petersburg, Russia

author

N.M. Kolchanova

• A.F. Ioffe Physico-Technical Institute, Russian Academy Of Science, 26 Polytekhnicheskaya, 194021 St. Petersburg, Russia

author

Yu.P. Yakovlev

• A.F. Ioffe Physico-Technical Institute, Russian Academy Of Science, 26 Polytekhnicheskaya, 194021 St. Petersburg, Russia

author

T.T. Piotrowski

• Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warszawa, Poland