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1995 | 87 | 2 | 559-562
Article title

Recombination nearby N-n GaSb/GaInAsSb Staggered Lineup Heterojunction

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EN
Abstracts
EN
The recombination nearby large band-offset staggered lineup N-GaSb/n-GaInAsSb heterojunction was investigated by means of the elec­troluminescence and carrier lifetime measurements. It was demonstrated that the nature of recombination, tuning rate as well as relation between radiative and non-radiative recombination strongly depend on the N-n band-offset and that its increase improves the carrier localization on the N-n interface.
Keywords
EN
Publisher

Year
Volume
87
Issue
2
Pages
559-562
Physical description
Dates
published
1995-02
Contributors
author
  • A.F. Ioffe Physico-Technical Institute, Russian Academy Of Science, 26 Polytekhnicheskaya, 194021 St. Petersburg, Russia
author
  • A.F. Ioffe Physico-Technical Institute, Russian Academy Of Science, 26 Polytekhnicheskaya, 194021 St. Petersburg, Russia
  • A.F. Ioffe Physico-Technical Institute, Russian Academy Of Science, 26 Polytekhnicheskaya, 194021 St. Petersburg, Russia
  • A.F. Ioffe Physico-Technical Institute, Russian Academy Of Science, 26 Polytekhnicheskaya, 194021 St. Petersburg, Russia
  • Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warszawa, Poland
References
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv87z262kz
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