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1995 | 87 | 2 | 528-532
Article title

Exciton Binding Energy in Extremely Shallow Quantum Wells

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EN
Abstracts
EN
The usual approach to the problem of excitons in semiconductor quan­tum wells is to assume that both the electron or the hole are primarily localized in the potential well regions defined by the band offsets, i.e., that the quantum wells are deep. We re-examine the problem of the exciton in the presence of a very shallow square well potential due to the (small) conduc­tion and valence band offsets in a semiconducting heterostructure. We show that the combined effects of the shallow well and the Coulomb interaction between the electron and the hole are equivalent to an effective potential acting on the center-of-mass of a three-dimensional exciton. We calculate the shape of such a potential and show it to be satisfactorily approximated by the potential of a parabolic well.
Keywords
EN
Year
Volume
87
Issue
2
Pages
528-532
Physical description
Dates
published
1995-02
References
Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv87z254kz
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