Doping of the Wide-Gap Semiconductor Cd_{1-x}Mg_{x}Te During Molecular Beam Epitaxy

• Authors: F. Fischer , Th. Litz , A. Waag , H. Heinke , S. Scholl , J. Gerschütz , G. Landwehr
• Languages of publication: EN

Abstracts

EN

We investigated the n-type doping of the wide-gap II-VI semiconductor (CdMg)Te. The n-type doping of (CdMg)Te has previously been achieved in only a small range of magnesium concentration. By the use of zinc iodine as dopant source material, we obtained highly doped (CdMg)Te layers up to a magnesium concentration of 40%. The limiting factor for the free carrier concentration at room temperature is the occurrence of a deep level, which dominates the electrical properties at room temperature of layers with more than 30% magnesium. Compensating defects or defect complexes are con­sidered, to explain the observed properties of the deep level, which do not seem to be characteristic of an isolated donor state.

Keywords

EN

68.55.Bd

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1995
• Volume: 87
• Issue: 2
• Pages: 487-491

Dates

published

1995-02

Contributors

author

F. Fischer

• Physikalisches Institut der Universität Würzburg, Am Hubland, 97074 Würzburg, Germany

author

Th. Litz

• Physikalisches Institut der Universität Würzburg, Am Hubland, 97074 Würzburg, Germany

author

A. Waag

• Physikalisches Institut der Universität Würzburg, Am Hubland, 97074 Würzburg, Germany

author

H. Heinke

• Physikalisches Institut der Universität Würzburg, Am Hubland, 97074 Würzburg, Germany

author

S. Scholl

• Physikalisches Institut der Universität Würzburg, Am Hubland, 97074 Würzburg, Germany

author

J. Gerschütz

• Physikalisches Institut der Universität Würzburg, Am Hubland, 97074 Würzburg, Germany

author

G. Landwehr

• Physikalisches Institut der Universität Würzburg, Am Hubland, 97074 Würzburg, Germany

Identifiers

DOI

10.12693/APhysPolA.87.487