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1995 | 87 | 2 | 487-491
Article title

Doping of the Wide-Gap Semiconductor Cd_{1-x}Mg_{x}Te During Molecular Beam Epitaxy

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Languages of publication
EN
Abstracts
EN
We investigated the n-type doping of the wide-gap II-VI semiconductor (CdMg)Te. The n-type doping of (CdMg)Te has previously been achieved in only a small range of magnesium concentration. By the use of zinc iodine as dopant source material, we obtained highly doped (CdMg)Te layers up to a magnesium concentration of 40%. The limiting factor for the free carrier concentration at room temperature is the occurrence of a deep level, which dominates the electrical properties at room temperature of layers with more than 30% magnesium. Compensating defects or defect complexes are con­sidered, to explain the observed properties of the deep level, which do not seem to be characteristic of an isolated donor state.
Keywords
EN
Publisher

Year
Volume
87
Issue
2
Pages
487-491
Physical description
Dates
published
1995-02
Contributors
author
  • Physikalisches Institut der Universität Würzburg, Am Hubland, 97074 Würzburg, Germany
author
  • Physikalisches Institut der Universität Würzburg, Am Hubland, 97074 Würzburg, Germany
author
  • Physikalisches Institut der Universität Würzburg, Am Hubland, 97074 Würzburg, Germany
author
  • Physikalisches Institut der Universität Würzburg, Am Hubland, 97074 Würzburg, Germany
author
  • Physikalisches Institut der Universität Würzburg, Am Hubland, 97074 Würzburg, Germany
author
  • Physikalisches Institut der Universität Würzburg, Am Hubland, 97074 Würzburg, Germany
author
  • Physikalisches Institut der Universität Würzburg, Am Hubland, 97074 Würzburg, Germany
References
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Publication order reference
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YADDA identifier
bwmeta1.element.bwnjournal-article-appv87z245kz
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