Conductivity of Optically Excited Electrons in GaAs in Quantizing Magnetic Fields

• Authors: J. Łusakowski , M. Grynberg , S. Huant
• Languages of publication: EN

Abstracts

EN

Magnetoconductivity (σ) measurements on an n-type molecular beam epitaxy grown epitaxial layer and on a bulk liquid encapsulated Czochralski grown undoped semi-insulating GaAs samples were performed for magnetic fields (B) up to 21 T at 4.2 K. To enable current measurements in a wide range of B both samples were permanently illuminated with a band-to-band light. It is shown that for sufficiently high magnetic fields σ(B) dependence is the same for both materials. This result underlines a role of scattering by long-range fluctuations of the electrostatic potential in high-quality n-GaAs in quantizing magnetic fields.

Keywords

EN

72.20.Hy; 72.20.Ht

Discipline

• 72.20.Ht: High-field and nonlinear effects

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1995
• Volume: 87
• Issue: 2
• Pages: 482-486

Dates

published

1995-02

Contributors

author

J. Łusakowski

• Institute of Experimental Physics, University of Warsaw, Hoża 69, 00-681 Warszawa, Poland

author

M. Grynberg

• Institute of Experimental Physics, University of Warsaw, Hoża 69, 00-681 Warszawa, Poland

author

S. Huant

• High Magnetic Field Laboratory, MPIF and CNRS, 25, Avenue des Martyrs, 38042 Grenoble, France

Identifiers

DOI

10.12693/APhysPolA.87.482