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1995 | 87 | 2 | 482-486
Article title

Conductivity of Optically Excited Electrons in GaAs in Quantizing Magnetic Fields

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EN
Abstracts
EN
Magnetoconductivity (σ) measurements on an n-type molecular beam epitaxy grown epitaxial layer and on a bulk liquid encapsulated Czochralski grown undoped semi-insulating GaAs samples were performed for magnetic fields (B) up to 21 T at 4.2 K. To enable current measurements in a wide range of B both samples were permanently illuminated with a band-to-band light. It is shown that for sufficiently high magnetic fields σ(B) dependence is the same for both materials. This result underlines a role of scattering by long-range fluctuations of the electrostatic potential in high-quality n-GaAs in quantizing magnetic fields.
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EN
Publisher

Year
Volume
87
Issue
2
Pages
482-486
Physical description
Dates
published
1995-02
Contributors
  • Institute of Experimental Physics, University of Warsaw, Hoża 69, 00-681 Warszawa, Poland
author
  • Institute of Experimental Physics, University of Warsaw, Hoża 69, 00-681 Warszawa, Poland
author
  • High Magnetic Field Laboratory, MPIF and CNRS, 25, Avenue des Martyrs, 38042 Grenoble, France
References
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Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv87z244kz
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