Stimulation of Crystalline Lattice Stabilization of Ga-In-P-As Layers during Heteroepitaxy

• Authors: J. Olchowik
• Languages of publication: EN

Abstracts

EN

Every process of heteroepitaxial synthesis from liquid phase of A^{III}B^{V} compounds is based on the contact of saturated solution with the binary substrate. The initial difference in the crystalline lattice parameters or in the radii of mutually substituting atoms of the interface causes the shift of the thermodynamic balance point of the system. The change in the total energy of the system connected with this effect causes the deviation of the actual composition of the crystallising solution with respect to the planed one. In the present paper there are shown the results of the theoretical and experimental analysis of the effect of InP substrates on parameters of the Ga_{x}In_{1-x}P_{y}As_{1-y} layer crystallised from liquid phase.

Keywords

EN

81.10.Dn

Discipline

• 81.10.Dn: Growth from solutions

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1995
• Volume: 87
• Issue: 2
• Pages: 477-481

Dates

published

1995-02

Contributors

author

J. Olchowik

• Department of Physics, Technical University of Lublin, Nadbystrzycka 38, 20-618 Lublin, Poland

Identifiers

DOI

10.12693/APhysPolA.87.477