Photo-ESR and Absorption Studies of Antisite Defects in GaP

• Authors: M. Palczewska , J. Jasiński , M. Kamińska
• Languages of publication: EN

Abstracts

EN

Photo-ESR and optical absorption measurements were done on annealed neutron irradiated GaP crystals. The position of paramagnetic gallium anti-site level in GaP energy gap has been determined. Additionally, the position of paramagnetic phosphorus antisite level, earlier determined in the paper of Kruger and Alexander, has been confirmed. Moreover, unusual in ESR experiments temperature dependence of phosphorus antisite amplitude in neutron irradiated GaP crystals has been explained.

Keywords

EN

71.55.Eq; 78.50.Ge; 76.30.Mi

Discipline

• 71.55.Eq: III-V semiconductors
• 76.30.Mi: Color centers and other defects

• Journal: Acta Physica Polonica A
• Year: 1995
• Volume: 87
• Issue: 2
• Pages: 461-464

Dates

published

1995-02

Contributors

author

M. Palczewska

• Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warszawa, Poland

author

J. Jasiński

• Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland

author

M. Kamińska

• Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland

Identifiers

DOI

10.12693/APhysPolA.87.461