Pressure Induced Shallow-Deep A_{1} Transition for Sn Donor in GaAs Observed in Diamond Anvil Cell Photoluminescence Experiment

• Authors: J. Dmochowski , R. Stradling , J. Sly , D. Dunstan , A. Prins , A. Adams
• Languages of publication: EN

Abstracts

EN

Variable-pressure Dunstan-type diamond anvil high pressure cell and a low temperature photoluminescence technique are used to observe the shallow-deep A_{1} transition for Sn donors in highly Sn doped n-type (≈ 10^{18} cm^{-3}) GaAs. Fermi level pinning to the position of the deep Sn donor state entering the gap close to 30 kbar pressure is observed. Drastic narrowing of the near-band-edge luminescence is observed in the transition region. The deep-donor pressure coefficient of 2 meV/kbar with respect to the valence band is deduced from the energy position of the deep donor-acceptor transitions.

Keywords

EN

71.55.Eq

Discipline

• 71.55.Eq: III-V semiconductors

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1995
• Volume: 87
• Issue: 2
• Pages: 457-460

Dates

published

1995-02

Contributors

author

J. Dmochowski

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland

author

R. Stradling

• Blackett Laboratory and Interdisciplinary Research Centre for Semiconductors, Imperial College of Science, Technology and Medicine, Prince Consort Road, Łondon SW7 2BZ, U.K.

author

J. Sly

• Physics Department, University of Surrey, Guildford, GU2 5XH, U.K.

author

D. Dunstan

• Physics Department, University of Surrey, Guildford, GU2 5XH, U.K.

author

A. Prins

• Physics Department, University of Surrey, Guildford, GU2 5XH, U.K.

author

A. Adams

• Physics Department, University of Surrey, Guildford, GU2 5XH, U.K.

Identifiers

DOI

10.12693/APhysPolA.87.457