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1995 | 87 | 2 | 457-460
Article title

Pressure Induced Shallow-Deep A_{1} Transition for Sn Donor in GaAs Observed in Diamond Anvil Cell Photoluminescence Experiment

Content
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Languages of publication
EN
Abstracts
EN
Variable-pressure Dunstan-type diamond anvil high pressure cell and a low temperature photoluminescence technique are used to observe the shallow-deep A_{1} transition for Sn donors in highly Sn doped n-type (≈ 10^{18} cm^{-3}) GaAs. Fermi level pinning to the position of the deep Sn donor state entering the gap close to 30 kbar pressure is observed. Drastic narrowing of the near-band-edge luminescence is observed in the transition region. The deep-donor pressure coefficient of 2 meV/kbar with respect to the valence band is deduced from the energy position of the deep donor-acceptor transitions.
Keywords
EN
Publisher

Year
Volume
87
Issue
2
Pages
457-460
Physical description
Dates
published
1995-02
Contributors
author
  • Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland
author
  • Blackett Laboratory and Interdisciplinary Research Centre for Semiconductors, Imperial College of Science, Technology and Medicine, Prince Consort Road, Łondon SW7 2BZ, U.K.
author
  • Physics Department, University of Surrey, Guildford, GU2 5XH, U.K.
author
  • Physics Department, University of Surrey, Guildford, GU2 5XH, U.K.
author
  • Physics Department, University of Surrey, Guildford, GU2 5XH, U.K.
author
  • Physics Department, University of Surrey, Guildford, GU2 5XH, U.K.
References
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv87z238kz
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