Photoluminescence, Reflectivity and Raman Investigations of Nanocrystallites in Luminescent Porous Silicon

• Authors: W. Bala , G. Głowacki , Z. Łukasiak , M. Drozdowski , M. Kozielski , E. Nossarzewska-Orłowska , A. Brzozowski
• Languages of publication: EN

Abstracts

EN

Raman scattering, reflectivity and photoluminescence measurements of the porous silicon layers prepared on (001) p/p^{+} silicon epitaxial wafers by anodization method are presented. We have studied dependence of the frequency shift and halfwidth of LO mode in Raman spectra and shift of the luminescence peak in photoluminescence spectra vs. anodization conditions.

Keywords

EN

78.30.Hv; 78.66.-w

Discipline

• 78.66.-w: Optical properties of specific thin films(for optical properties of low-dimensional, mesoscopic, and nanoscale materials, see 78.67.-n; for optical properties of surfaces, see 78.68.+m)
• 78.30.Hv: Other nonmetallic inorganics

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1995
• Volume: 87
• Issue: 2
• Pages: 445-448

Dates

published

1995-02

Contributors

author

W. Bala

• Institute of Physics, N. Copernicus University, Grudziądzka 5, 87-100 Toruń, Poland

author

G. Głowacki

• Institute of Physics, N. Copernicus University, Grudziądzka 5, 87-100 Toruń, Poland

author

Z. Łukasiak

• Institute of Physics, N. Copernicus University, Grudziądzka 5, 87-100 Toruń, Poland

author

M. Drozdowski

• Institute of Physics, Poznań University of Technology, Piotrowo 3, 60-965 Poznań, Poland

author

M. Kozielski

• Institute of Physics, Poznań University of Technology, Piotrowo 3, 60-965 Poznań, Poland

author

E. Nossarzewska-Orłowska

• Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warszawa, Poland

author

A. Brzozowski

• Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warszawa, Poland

Identifiers

DOI

10.12693/APhysPolA.87.445