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1995 | 87 | 2 | 445-448
Article title

Photoluminescence, Reflectivity and Raman Investigations of Nanocrystallites in Luminescent Porous Silicon

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EN
Abstracts
EN
Raman scattering, reflectivity and photoluminescence measurements of the porous silicon layers prepared on (001) p/p^{+} silicon epitaxial wafers by anodization method are presented. We have studied dependence of the frequency shift and halfwidth of LO mode in Raman spectra and shift of the luminescence peak in photoluminescence spectra vs. anodization conditions.
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Contributors
author
  • Institute of Physics, N. Copernicus University, Grudziądzka 5, 87-100 Toruń, Poland
author
  • Institute of Physics, N. Copernicus University, Grudziądzka 5, 87-100 Toruń, Poland
author
  • Institute of Physics, N. Copernicus University, Grudziądzka 5, 87-100 Toruń, Poland
author
  • Institute of Physics, Poznań University of Technology, Piotrowo 3, 60-965 Poznań, Poland
author
  • Institute of Physics, Poznań University of Technology, Piotrowo 3, 60-965 Poznań, Poland
  • Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warszawa, Poland
author
  • Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warszawa, Poland
References
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Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv87z235kz
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