Weak Antilocalization in Quantum Wells

• Authors: W. Knap , C. Skierbiszewski , E. Litwin-Staszewska , F. Kobbi , A. Zduniak , J. Robert , G. Pikus , S. Iordanskii , V. Mosser , K. Zekentes
• Languages of publication: EN

Abstracts

EN

Spin relaxation in degenerated two-dimensional (2D) electron gas is studied by measurements of the magnetic field dependence of the weak an­tilocalization corrections to the conductivity in GaInAs quantum wells. Con­sistent quantitative (up to order of magnitude) description of weak antilocal­ization data on GaAs like heterojunctions and quantum wells was obtained. Our results show that spin precession around the effective magnetic field direction as described by the Dyakonov-Perel model is the main spin relax­ation mechanism in degenerated 2D electron gas in semiconductors with no inversion symmetry.

Keywords

EN

72.15.Lh; 73.20.Fz; 72.15.Rn

Discipline

• 72.15.Rn: Localization effects (Anderson or weak localization)
• 72.15.Lh: Relaxation times and mean free paths
• 73.20.Fz: Weak or Anderson localization

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1995
• Volume: 87
• Issue: 2
• Pages: 427-432

Dates

published

1995-02

Contributors

author

W. Knap

• Groupe d'Etude des Semiconducteurs, Université Montpellier II, Place E. Bataillon, 34095 Montpellier-Cedex 05, France

author

C. Skierbiszewski

• Groupe d'Etude des Semiconducteurs, Université Montpellier II, Place E. Bataillon, 34095 Montpellier-Cedex 05, France

author

E. Litwin-Staszewska

• Groupe d'Etude des Semiconducteurs, Université Montpellier II, Place E. Bataillon, 34095 Montpellier-Cedex 05, France

author

F. Kobbi

• Groupe d'Etude des Semiconducteurs, Université Montpellier II, Place E. Bataillon, 34095 Montpellier-Cedex 05, France

author

A. Zduniak

• Groupe d'Etude des Semiconducteurs, Université Montpellier II, Place E. Bataillon, 34095 Montpellier-Cedex 05, France

author

J. Robert

• Groupe d'Etude des Semiconducteurs, Université Montpellier II, Place E. Bataillon, 34095 Montpellier-Cedex 05, France

author

G. Pikus

• A.F. Ioffe Physicotechnical Institute, Russian Academy Of Sciences, St Petersbourg, Russia

author

S. Iordanskii

• Landau Institute for Theoretical Physics, 117940 Moscow, Russia

author

V. Mosser

• Schlumberger Montrouge Recherche 50, Avenue Jean Jaurés, B.P. 620-05, 92542 Montrouge, France

author

K. Zekentes

• Forth Institute of Electronic Structure and Laser, P.O. Box 1527, Heraklion, 71110 - Crete, Greece

Identifiers

DOI

10.12693/APhysPolA.87.427