Density of Gap States Deconvoluted from Photoconductive Spectra for Undoped Amorphous Silicon and Silicon-Carbon Thin Films

• Authors: T. Pisarkiewicz , T. Stapiński , G. Adriaenssens , W. Lauwerens , P. Rava
• Languages of publication: EN

Abstracts

EN

Density of states in amorphous hydrogenated silicon and silicon-carbon thin films were calculated by deconvolution of the optical absorption coeffi­cient a! measured by constant photocurrent method. Addition of carbon to silicon lattice increases the optical band-gap and influences the distribution of defect states in the gap.

Keywords

EN

73.20.Dx

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1995
• Volume: 87
• Issue: 2
• Pages: 407-410

Dates

published

1995-02

Contributors

author

T. Pisarkiewicz

• Department of Electronics, Academy of Mining and Metallurgy, Kraków, Poland

author

T. Stapiński

• Department of Electronics, Academy of Mining and Metallurgy, Kraków, Poland

author

G. Adriaenssens

• Department of Solid State and High Pressure Physics, Katholieke Universiteit Leuven, Leuven - Heverlee, Belgium

author

W. Lauwerens

• Department of Solid State and High Pressure Physics, Katholieke Universiteit Leuven, Leuven - Heverlee, Belgium

author

P. Rava

• Elettrorava S.p.A., Savonera Torino, Italy

Identifiers

DOI

10.12693/APhysPolA.87.407