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1995 | 87 | 2 | 407-410
Article title

Density of Gap States Deconvoluted from Photoconductive Spectra for Undoped Amorphous Silicon and Silicon-Carbon Thin Films

Content
Title variants
Languages of publication
EN
Abstracts
EN
Density of states in amorphous hydrogenated silicon and silicon-carbon thin films were calculated by deconvolution of the optical absorption coeffi­cient a! measured by constant photocurrent method. Addition of carbon to silicon lattice increases the optical band-gap and influences the distribution of defect states in the gap.
Keywords
EN
Publisher

Year
Volume
87
Issue
2
Pages
407-410
Physical description
Dates
published
1995-02
Contributors
  • Department of Electronics, Academy of Mining and Metallurgy, Kraków, Poland
author
  • Department of Electronics, Academy of Mining and Metallurgy, Kraków, Poland
  • Department of Solid State and High Pressure Physics, Katholieke Universiteit Leuven, Leuven - Heverlee, Belgium
author
  • Department of Solid State and High Pressure Physics, Katholieke Universiteit Leuven, Leuven - Heverlee, Belgium
author
  • Elettrorava S.p.A., Savonera Torino, Italy
References
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv87z226kz
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