Epitaxial Layers Versus Bulk Single Crystals of GaN. Temperature Studies of Lattice Parameters and Energy Gap

• Authors: H. Teisseyre , P. Perlin , M. Leszczyński , T. Suski , L. Dmowski , I. Grzegory , S. Porowski , J. Jun , T. Moustakas
• Languages of publication: EN

Abstracts

EN

Gallium nitride epitaxial layer grown by molecular beam epitaxy and bulk crystal grown at high pressure were examined by using X-ray diffrac­tion methods, and by optical absorption at a wide temperature range. The free electron concentration was 6 × 10^{17} cm^{-3} for the layer and about 5 × 10^{19} cm^{-3} for the bulk crystal. The experiments revealed a different po­sition of the absorption edge and its temperature dependence for these two kinds of samples. The structural examinations proved a significantly higher crystallographic quality of the bulk sample. However, the lattice constants of the samples were nearly the same. This indicated that a rather different electron concentration was responsible for the different optical properties via Burstein-Moss effect.

Keywords

EN

65.70.+y; 78.50.Ge; 78.66.Fd

Discipline

• 78.66.Fd: III-V semiconductors

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1995
• Volume: 87
• Issue: 2
• Pages: 403-406

Dates

published

1995-02

Contributors

author

H. Teisseyre

• High Pressure Research Center "Unipress", Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warszawa, Poland

author

P. Perlin

• High Pressure Research Center "Unipress", Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warszawa, Poland

author

M. Leszczyński

• High Pressure Research Center "Unipress", Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warszawa, Poland

author

T. Suski

• High Pressure Research Center "Unipress", Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warszawa, Poland

author

L. Dmowski

• High Pressure Research Center "Unipress", Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warszawa, Poland

author

I. Grzegory

• High Pressure Research Center "Unipress", Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warszawa, Poland

author

S. Porowski

• High Pressure Research Center "Unipress", Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warszawa, Poland

author

J. Jun

• High Pressure Research Center "Unipress", Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warszawa, Poland

author

T. Moustakas

• Boston University, Molecular Beam Epitaxy Laboratory, Department of Electrical, Computer and System Engineering, Boston MA 02215, USA

Identifiers

DOI

10.12693/APhysPolA.87.403