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1995 | 87 | 2 | 403-406
Article title

Epitaxial Layers Versus Bulk Single Crystals of GaN. Temperature Studies of Lattice Parameters and Energy Gap

Content
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Languages of publication
EN
Abstracts
EN
Gallium nitride epitaxial layer grown by molecular beam epitaxy and bulk crystal grown at high pressure were examined by using X-ray diffrac­tion methods, and by optical absorption at a wide temperature range. The free electron concentration was 6 × 10^{17} cm^{-3} for the layer and about 5 × 10^{19} cm^{-3} for the bulk crystal. The experiments revealed a different po­sition of the absorption edge and its temperature dependence for these two kinds of samples. The structural examinations proved a significantly higher crystallographic quality of the bulk sample. However, the lattice constants of the samples were nearly the same. This indicated that a rather different electron concentration was responsible for the different optical properties via Burstein-Moss effect.
Keywords
EN
Publisher

Year
Volume
87
Issue
2
Pages
403-406
Physical description
Dates
published
1995-02
Contributors
author
  • High Pressure Research Center "Unipress", Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warszawa, Poland
author
  • High Pressure Research Center "Unipress", Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warszawa, Poland
  • High Pressure Research Center "Unipress", Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warszawa, Poland
author
  • High Pressure Research Center "Unipress", Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warszawa, Poland
author
  • High Pressure Research Center "Unipress", Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warszawa, Poland
author
  • High Pressure Research Center "Unipress", Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warszawa, Poland
author
  • High Pressure Research Center "Unipress", Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warszawa, Poland
author
  • High Pressure Research Center "Unipress", Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warszawa, Poland
author
  • Boston University, Molecular Beam Epitaxy Laboratory, Department of Electrical, Computer and System Engineering, Boston MA 02215, USA
References
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv87z225kz
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