Journal
Article title
Title variants
Languages of publication
Abstracts
Deep levels in Ga doped n-type CdMnTe of 1% and 5% Mn contents and In doped n-type CdMnTe of 20% Mn content were studied using deep level transient spectroscopy technique. Our deep level transient spectroscopy results show presence of several groups of different traps.
Keywords
Journal
Year
Volume
Issue
Pages
387-390
Physical description
Dates
published
1995-02
Contributors
author
- Technical University of Wrocław, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland
author
- Technical University of Wrocław, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland
author
- Technical University of Wrocław, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland
author
- Technical University of Wrocław, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland
author
- Maritime Academy, Wały Chrobrego 1, Szczecin, Poland
author
- Massachussetts Institute of Technology, Cambridge, MA 02139, USA
References
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv87z221kz