Fine Structure of Resonant-Tunneling Peak in GaAs/AlAs Double-Barrier Heterostructure

• Authors: S. Vitusevich , T. Figielski , A. Mąkosa , T. Wosiński , A. Belyaev , R. Konakova , L. Kravchenko
• Languages of publication: EN

Abstracts

EN

For the first time we observed a fine oscillatory structure, with the period of 36 mV, of the resonant tunneling peak in the current-voltage char­acteristic of a double-barrier heterostructure. We attribute it to a sequential single-phonon emission of ballistic electrons which tunneled out from the quantum well through the collector barrier.

Keywords

EN

73.40.Gk; 85.30.Mn

Discipline

• 85.30.Mn: Junction breakdown and tunneling devices (including resonance tunneling devices)
• 73.40.Gk: Tunneling(for tunneling in quantum Hall effects, see 73.43.Jn)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1995
• Volume: 87
• Issue: 2
• Pages: 377-380

Dates

published

1995-02

Contributors

author

S. Vitusevich

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland

author

T. Figielski

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland

author

A. Mąkosa

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland

author

T. Wosiński

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland

author

A. Belyaev

• Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 252028 Kiev, Ukraine

author

R. Konakova

• Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 252028 Kiev, Ukraine

author

L. Kravchenko

• Science and Research Institute of Molecular Electronics, 103460 Moscov, Russia

Identifiers

DOI

10.12693/APhysPolA.87.377