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1995 | 87 | 2 | 377-380
Article title

Fine Structure of Resonant-Tunneling Peak in GaAs/AlAs Double-Barrier Heterostructure

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EN
Abstracts
EN
For the first time we observed a fine oscillatory structure, with the period of 36 mV, of the resonant tunneling peak in the current-voltage char­acteristic of a double-barrier heterostructure. We attribute it to a sequential single-phonon emission of ballistic electrons which tunneled out from the quantum well through the collector barrier.
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Contributors
author
  • Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland
author
  • Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland
author
  • Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland
author
  • Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland
author
  • Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 252028 Kiev, Ukraine
author
  • Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 252028 Kiev, Ukraine
author
  • Science and Research Institute of Molecular Electronics, 103460 Moscov, Russia
References
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Publication order reference
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bwmeta1.element.bwnjournal-article-appv87z219kz
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