Gain Studies on Photoconductors Made on Partly Compensated GaAs

• Authors: F. Riesz
• Languages of publication: EN

Abstracts

EN

The gain behavior of GaAs photoconductors realized on the partly com­pensated channel of a MESFET is studied. The gain versus light power de­pendence hints at the domination of the bimolecular recombination and the trap-mediated gain, and only a minor role of the surface photovoltaic ef­fect. The possible correlation between dark current and gain mechanism is pointed out.

Keywords

EN

73.50.Pz; 85.60.Gz

Discipline

• 85.60.Gz: Photodetectors (including infrared and CCD detectors)(for superconducting infrared detectors, see 85.25.Pb; for superconducting optical, x-ray and γ-ray detectors, see 85.25.Oj; see also 07.57.Kp in instruments)
• 73.50.Pz: Photoconduction and photovoltaic effects

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1995
• Volume: 87
• Issue: 2
• Pages: 373-376

Dates

published

1995-02

Contributors

author

F. Riesz

• Research Institute for Technical Physics of the Hungarian Academy of Sciences, P. 0. Box 76, 1325 Budapest, Hungary

Identifiers

DOI

10.12693/APhysPolA.87.373