Deep-Level Defects at Lattice-Mismatched GaAsSb/GaAs Interface

• Authors: T. Wosiński , A. Mąkosa , J. Raczyńska
• Languages of publication: EN

Abstracts

EN

Lattice-mismatch-induced defects were studied by means of deep-level transient spectroscopy in high-purity GaAs_{1-x}Sb_{x} layers (x = O to 3%) grown by liquid phase epitaxy on GaAs substrates. Microscopic nature and formation mechanism of two electron traps and two hole traps, which ap­peared in the layers as a result of Sb incorporation into the crystal lattice, are briefly discussed.

Keywords

EN

73.20.Hb; 61.72.Lk; 71.55.Eq

Discipline

• 73.20.Hb: Impurity and defect levels; energy states of adsorbed species
• 71.55.Eq: III-V semiconductors
• 61.72.Lk: Linear defects: dislocations, disclinations

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1995
• Volume: 87
• Issue: 2
• Pages: 369-372

Dates

published

1995-02

Contributors

author

T. Wosiński

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland

author

A. Mąkosa

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland

author

J. Raczyńska

• Institute of Technical Physics, Military University of Technology, Kaliskiego 2, 01-489 Warszawa, Poland

Identifiers

DOI

10.12693/APhysPolA.87.369