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1995 | 87 | 2 | 369-372
Article title

Deep-Level Defects at Lattice-Mismatched GaAsSb/GaAs Interface

Content
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Languages of publication
EN
Abstracts
EN
Lattice-mismatch-induced defects were studied by means of deep-level transient spectroscopy in high-purity GaAs_{1-x}Sb_{x} layers (x = O to 3%) grown by liquid phase epitaxy on GaAs substrates. Microscopic nature and formation mechanism of two electron traps and two hole traps, which ap­peared in the layers as a result of Sb incorporation into the crystal lattice, are briefly discussed.
Keywords
EN
Year
Volume
87
Issue
2
Pages
369-372
Physical description
Dates
published
1995-02
References
Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv87z217kz
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