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1995 | 87 | 2 | 369-372
Article title

Deep-Level Defects at Lattice-Mismatched GaAsSb/GaAs Interface

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Abstracts
EN
Lattice-mismatch-induced defects were studied by means of deep-level transient spectroscopy in high-purity GaAs_{1-x}Sb_{x} layers (x = O to 3%) grown by liquid phase epitaxy on GaAs substrates. Microscopic nature and formation mechanism of two electron traps and two hole traps, which ap­peared in the layers as a result of Sb incorporation into the crystal lattice, are briefly discussed.
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Contributors
author
  • Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland
author
  • Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland
author
  • Institute of Technical Physics, Military University of Technology, Kaliskiego 2, 01-489 Warszawa, Poland
References
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Publication order reference
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bwmeta1.element.bwnjournal-article-appv87z217kz
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