Influence of Coimplantation on Activation of Er Emission in Si

• Authors: H. Przybylińska , G. Hendorfer , W. Jantsch , L. Palmetshofer
• Languages of publication: EN

Abstracts

EN

The results of high resolution photoluminescence studies of erbium im­planted silicon are presented. We show that the apparent enhancement of Er emission by coimplantation with light elements is not due to formation of Er-dopant complexes, but rather to Er forming complexes with defects induced by the implantation process alone.

Keywords

EN

78.55.Hx; 61.72.Tt

Discipline

• 78.55.Hx: Other solid inorganic materials

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1995
• Volume: 87
• Issue: 2
• Pages: 365-368

Dates

published

1995-02

Contributors

author

H. Przybylińska

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland

author

G. Hendorfer

• Institut für Experimentalphysik, Johannes Kepler Universität, 4040 Linz-Auhof, Austria

author

W. Jantsch

• Institut für Experimentalphysik, Johannes Kepler Universität, 4040 Linz-Auhof, Austria

author

L. Palmetshofer

• Institut für Experimentalphysik, Johannes Kepler Universität, 4040 Linz-Auhof, Austria

Identifiers

DOI

10.12693/APhysPolA.87.365