PL EN


Preferences help
enabled [disable] Abstract
Number of results
1995 | 87 | 2 | 365-368
Article title

Influence of Coimplantation on Activation of Er Emission in Si

Content
Title variants
Languages of publication
EN
Abstracts
EN
The results of high resolution photoluminescence studies of erbium im­planted silicon are presented. We show that the apparent enhancement of Er emission by coimplantation with light elements is not due to formation of Er-dopant complexes, but rather to Er forming complexes with defects induced by the implantation process alone.
Keywords
EN
Publisher

Year
Volume
87
Issue
2
Pages
365-368
Physical description
Dates
published
1995-02
Contributors
  • Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland
author
  • Institut für Experimentalphysik, Johannes Kepler Universität, 4040 Linz-Auhof, Austria
author
  • Institut für Experimentalphysik, Johannes Kepler Universität, 4040 Linz-Auhof, Austria
  • Institut für Experimentalphysik, Johannes Kepler Universität, 4040 Linz-Auhof, Austria
References
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv87z216kz
JavaScript is turned off in your web browser. Turn it on to take full advantage of this site, then refresh the page.