Influence of Screening and Electric Field on Exciton Binding Energy in Asymmetric Double Quantum Well

• Authors: B. Olejníková
• Languages of publication: EN

Abstracts

EN

The influence of screening by confined free electrons on the exciton binding energy in the asymmetric double quantum well is calculated for var­ious values of applied electric field perpendicular to the layer plane. The dependence of the exciton binding energy on carrier concentration is found to be stronger for lower than for higher fields. The drop of field-dependent exciton energy is less remarkable at higher densities of free electrons. Calcu­lations were performed at 10 and 300 K, and up to densities of 10^{14} m^{-2} and 7 × 10^{14} m^{-2}, respectively.

Keywords

EN

73.40.Kp; 73.20.Dx

Discipline

• 73.40.Kp: III-V semiconductor-to-semiconductor contacts,p-njunctions, and heterojunctions

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1995
• Volume: 87
• Issue: 2
• Pages: 353-356

Dates

published

1995-02

Contributors

author

B. Olejníková

• Institute of Electrical Engineering, Slovak Academy of Sciences, Dúbrayská cesta 9, 842 39 Bratislava, Slovakia

Identifiers

DOI

10.12693/APhysPolA.87.353