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1995 | 87 | 2 | 349-352
Article title

Formation Energy and Electronic Structure of II-VI/IV Semiconductor Superlattices

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EN
Abstracts
EN
We calculate formation energy and electronic structure of ultrathin (001)II-VI/IV semiconductor superlattices using the Korringa-Kohn-Rosto­ker all-electron method. Formation energies (∆H) are 2.18 eV for (Ge_{2})_{1}(ZnSe)_{1} and 1.50 eV for (ZnS)_{1}(Si_{2})_{1}. The results of this work are significantly different from these by Ferraz and Srivastava who obtained ∆H = 0.88 eV for (001)(Ge_{2})_{1}(ZnSe)_{1} and moreover the one-layer super-lattices are metallic, which confirms the results by Ohno and Ito. The large formation energies surely lead to interfacial instability.
Keywords
EN
Year
Volume
87
Issue
2
Pages
349-352
Physical description
Dates
published
1995-02
References
Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv87z212kz
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