Effect of Accumulation Layer on Tunneling in ZnSe-ZnTe Double Barrier Heterostructures

• Authors: P. Bała , R. Ryszewski , W. Bała
• Languages of publication: EN

Abstracts

EN

The tunneling probability in double barrier heterostructures can be af­fected by various effects. One of the most significant is presence of the ac­cumulation layer placed before the structure. The presented time-dependent results show that charge trapped in the accumulation region oscillates in the triangular quantum well and tunnels sequentially through the double barrier structure resulting in periodical changes of the charge density right to the heterostructure.

Keywords

EN

03.65.-w; 73.40.Gk

Discipline

• 03.65.-w: Quantum mechanics[see also 03.67.-a Quantum information; 05.30.-d Quantum statistical mechanics; 31.30.J- Relativistic and quantum electrodynamics (QED) effects in atoms, molecules, and ions in atomic physics]
• 73.40.Gk: Tunneling(for tunneling in quantum Hall effects, see 73.43.Jn)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1995
• Volume: 87
• Issue: 2
• Pages: 341-344

Dates

published

1995-02

Contributors

author

P. Bała

• Institute of Physics, N. Copernicus University, Grudziądzka 5, 87-100 Toruń, Poland

author

R. Ryszewski

• Institute of Physics, N. Copernicus University, Grudziądzka 5, 87-100 Toruń, Poland

author

W. Bała

• Institute of Physics, N. Copernicus University, Grudziądzka 5, 87-100 Toruń, Poland

Identifiers

DOI

10.12693/APhysPolA.87.341