Effect of Accumulation Layer on Tunneling in ZnSe-ZnTe Double Barrier Heterostructures
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The tunneling probability in double barrier heterostructures can be affected by various effects. One of the most significant is presence of the accumulation layer placed before the structure. The presented time-dependent results show that charge trapped in the accumulation region oscillates in the triangular quantum well and tunnels sequentially through the double barrier structure resulting in periodical changes of the charge density right to the heterostructure.
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