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1995 | 87 | 2 | 341-344
Article title

Effect of Accumulation Layer on Tunneling in ZnSe-ZnTe Double Barrier Heterostructures

Content
Title variants
Languages of publication
EN
Abstracts
EN
The tunneling probability in double barrier heterostructures can be af­fected by various effects. One of the most significant is presence of the ac­cumulation layer placed before the structure. The presented time-dependent results show that charge trapped in the accumulation region oscillates in the triangular quantum well and tunnels sequentially through the double barrier structure resulting in periodical changes of the charge density right to the heterostructure.
Keywords
EN
Year
Volume
87
Issue
2
Pages
341-344
Physical description
Dates
published
1995-02
References
Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv87z210kz
Identifiers
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