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1995 | 87 | 2 | 337-340
Article title

Model of Hopping between Deep Centers in Low Temperature GaAs

Content
Title variants
Languages of publication
EN
Abstracts
EN
A model explaining hopping conductivity via EL2 deep centers in low temperature GaAs is presented. It is proposed that the wave function of the EL2 center consists of a localized part and of an external one. The model can describe such features as large wave function radius of hopping centers, changes of the conductivity during transition of EL2 to the metastable state and a high potential fluctuation amplitude.
Keywords
EN
Year
Volume
87
Issue
2
Pages
337-340
Physical description
Dates
published
1995-02
References
Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv87z209kz
Identifiers
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