Model of Hopping between Deep Centers in Low Temperature GaAs
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A model explaining hopping conductivity via EL2 deep centers in low temperature GaAs is presented. It is proposed that the wave function of the EL2 center consists of a localized part and of an external one. The model can describe such features as large wave function radius of hopping centers, changes of the conductivity during transition of EL2 to the metastable state and a high potential fluctuation amplitude.
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