EN
ZnTe-Cd_{1-x}Mn_{x}Te_{1-y}Se_{y} heterojunctions were prepared by vapor-transport epitaxy of ZnTe on In-doped Cd_{1-x}Mn_{x}Te_{1-y}Se_{y} (x = 0.05, y = 0.03) single crystalline substrate in vacuum. At temperatures lower than 120 K the infrared and red electroluminescence were observed from the ZnTe-Cd_{1-x}Mn_{x}Te_{1-y}Se_{y} diode with forward current density in the range 0.003-4.0 A/cm^{2}.