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1995 | 87 | 2 | 321-324
Article title

Nature of Donors in SiC

Content
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Languages of publication
EN
Abstracts
EN
6H-SiC samples were examined by ESR technique in temperature range from 5 K up to 300 K. Two kinds of ESR lines were observed: a single line at g = 2.0054 ± 0.0007, called X-line, and a triplet corresponding to isolated nitrogen defect. Ionization energy of X defect was determined as about 60 meV and the ionization energy of isolated nitrogen was determined as about 200 meV below SiC conduction band.
Keywords
EN
Year
Volume
87
Issue
2
Pages
321-324
Physical description
Dates
published
1995-02
References
Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv87z205kz
Identifiers
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