Nature of Donors in SiC

• Authors: B. Suchanek , R. Dwiliński , M. Kamińska , M. Palczewska , S. Vlaskina
• Languages of publication: EN

Abstracts

EN

6H-SiC samples were examined by ESR technique in temperature range from 5 K up to 300 K. Two kinds of ESR lines were observed: a single line at g = 2.0054 ± 0.0007, called X-line, and a triplet corresponding to isolated nitrogen defect. Ionization energy of X defect was determined as about 60 meV and the ionization energy of isolated nitrogen was determined as about 200 meV below SiC conduction band.

Keywords

EN

76.30.Da

Discipline

• 76.30.Da: Ions and impurities: general

• Journal: Acta Physica Polonica A
• Year: 1995
• Volume: 87
• Issue: 2
• Pages: 321-324

Dates

published

1995-02

Contributors

author

B. Suchanek

• Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland

author

R. Dwiliński

• Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland

author

M. Kamińska

• Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland

author

M. Palczewska

• Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warszawa, Poland

author

S. Vlaskina

• Institute of Semiconductors Physics, Ukrainian Academy of Sciences, Prospekt Nauki 28, 252065 Kiev, Ukraine

Identifiers

DOI

10.12693/APhysPolA.87.321