Nature of Donors in SiC

B. Suchanek; R. Dwiliński; M. Kamińska; M. Palczewska; S. Vlaskina

doi:10.12693/APhysPolA.87.321

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Acta Physica Polonica A

1995 | 87 | 2 | 321-324

Article title

Nature of Donors in SiC

Authors

B. Suchanek , R. Dwiliński , M. Kamińska , M. Palczewska , S. Vlaskina

Content

http://przyrbwn.icm.edu.pl/APP/PDF/87/a087z2p05.pdf [remote]

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Abstracts

6H-SiC samples were examined by ESR technique in temperature range from 5 K up to 300 K. Two kinds of ESR lines were observed: a single line at g = 2.0054 ± 0.0007, called X-line, and a triplet corresponding to isolated nitrogen defect. Ionization energy of X defect was determined as about 60 meV and the ionization energy of isolated nitrogen was determined as about 200 meV below SiC conduction band.

Keywords

76.30.Da

Publisher

Institute of Physics, Polish Academy of Sciences

Journal

Acta Physica Polonica A

Year

1995

Volume

Issue

Pages

321-324

Physical description

Dates

published

1995-02

References

Document Type

Publication order reference

YADDA identifier

bwmeta1.element.bwnjournal-article-appv87z205kz

Identifiers

DOI

10.12693/APhysPolA.87.321