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1995 | 87 | 2 | 295-302
Article title

High Pressure Crystallization of III-V Nitrides

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Languages of publication
EN
Abstracts
EN
Crystal growth from the solution under high N_{2} pressure (HNP method) results in high quality mm size crystals of GaN in 5 to 24 hour process. The crystallization of AlN is less efficient due to relatively lower solubility of nitrogen in the liquid Al. Possibility of InN growth is strongly limited since this compound is unstable at T > 600°C even at 20 kbar. The growth of cm size high quality GaN crystals requires lower supersaturations and longer processes.
Keywords
EN
Year
Volume
87
Issue
2
Pages
295-302
Physical description
Dates
published
1995-02
References
Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv87z202kz
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