High Pressure Crystallization of III-V Nitrides

• Authors: S. Porowski
• Languages of publication: EN

Abstracts

EN

Crystal growth from the solution under high N_{2} pressure (HNP method) results in high quality mm size crystals of GaN in 5 to 24 hour process. The crystallization of AlN is less efficient due to relatively lower solubility of nitrogen in the liquid Al. Possibility of InN growth is strongly limited since this compound is unstable at T > 600°C even at 20 kbar. The growth of cm size high quality GaN crystals requires lower supersaturations and longer processes.

Keywords

EN

81.10.-h

Discipline

• 81.10.-h: Methods of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation(see also 61.50.Lt Crystal binding, cohesive energy)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1995
• Volume: 87
• Issue: 2
• Pages: 295-302

Dates

published

1995-02

Contributors

author

S. Porowski

• High Pressure Research Center, Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warszawa, Poland

Identifiers

DOI

10.12693/APhysPolA.87.295